Over the last decade, Phoenix has commercialized a very high current, long lifetime ion source and accelerator for neutron generation applications. That same technology is particularly well suited for certain growing semiconductor ion implantation applications, including hydrogen-based wafer cleaving and layer transfer. Phoenix has fielded hydrogen implanters with beam current up to 100mA and voltage up to 300kV.
The use of hydrogen and helium for ion-based cleaving of semiconductors requires implant doses that are orders of magnitude higher than traditional implants for doping and other processes. In order to reach reasonable wafer throughput levels, beam current in excess of 50mA is required, which is not available in off the shelf ion implanters.
